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  Datasheet File OCR Text:
 Semiconductor
BC856
PNP Silicon Transistor
Descriptions
* General purpose application * Switching application
Features
* High voltage : VCEO=-55V * Complementary pair with BC846
Ordering Information
Type NO. BC856 Marking TA : hFE rank Package Code SOT-23
Outline Dimensions
2.40.1 1.300.1
unit : mm
1
1.90 Typ.
3 2
0.4 Typ. 0.45~0.60
0.2 Min.
1.12 Max.
2.90.1
KST-2009-000
0.124
PIN Connections 1. Base 2. Emitter 3. Collector
0.38
0~0.1
-0.03 +0.05
1
BC856
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-80 -55 -5 -100 200 150 -55~150
Unit
V V V mA mW C C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise figure
(Ta=25C)
Symbol
BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO hFE* fT Cob NF
Test Condition
IC=-2mA, IB=0 VCE=-5V, IC=-2mA IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA VCB=-35V, IE=0 VCE=-5V, IC=-2mA VCB=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-200A, f=1KHz,Rg=2K
Min. Typ. Max.
-55 110 -900 150 -700 -650 -15 800 4.5 10
Unit
V mV mV mV nA MHz pF dB
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KST-2009-000
2
BC856
Electrical Characteristic Curves
Fig. 1 PC-Ta Fig. 2 IC-VBE
Fig. 3 IC-VCE
Fig. 4 hFE-IC
Fig. 5 VCE(sat) -IC
KST-2009-000
3


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